. Electronic Components Datasheets gm2301 free download

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Guilin Strong Micro-Electronics Co.,Ltd. GM2301 SOT-23 (SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P MOS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS -20 V - Gate- Source Voltage VGS +10 V - Drain Current (continuous) ID -2.8 A - Drain Current (pulsed) IDM -10 A - Total Device Dissipation PD 900 mW TA=25 25 Junction TJ 150 Storage Temperature Tstg -55to+150 DEVICE MARKING GM2301=A1 GM2301 2301= Guilin Strong Micro-Electronics Co.,Ltd. GM2301 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS -20 -- -- V -(ID = -250uA ,VGS=0V) Gate Threshold Voltage VGS(th) -0.5 -- -1.5 V (ID = -250uA ,VGS= VDS) Diode Forward Voltage Drop VSD -- -- -1.5 V (IS= -0.75A ,VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= -16V) IDSS -- -- -1 uA (VGS=0V, VDS= -16V, TA=55) -10 Gate Body Leakage IGSS -- -- +100 nA (VGS=+10V, VDS=0V) Static Drain-Source On-State Resistance RDS(ON) -- -- 100 m (ID= -2.8A ,VGS= -4.5V) Static Drain-Source On-State Resistance RDS(ON) -- -- 120 m (ID= -2A ,VGS= -2.5V) Input Capacitance CISS -- 600 -- pF (VGS=0V, VDS= -10V,f=1MHz) Output Capacitance COSS -- 120 -- pF (VGS=0V, VDS= -10V,f=1MHz) Turn-ON Time t(on) -- 8 -- ns (VDS= -10V, ID= -2.8A, RGEN=6) Turn-OFF Time t(off) -- 60 -- ns (VDS= -10V, ID= -2.8A, RGEN=6) Pulse Width<300s; Duty Cycle<2.0% Guilin Strong Micro-Electronics Co.,Ltd. GM2301 DIMENSION