. Electronic Components Datasheets ksc5039f free download

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KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation (T C=25) PC 30 W Junction Temperature TJ 150 Storage Temperature T STG -65 ~ 150 1 . Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (Tc=25) Characteristic Symbol Test Condition Min Typ Max Unit Collector- Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 V Collector- Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 400 V Emitter- Base Breakdown Voltage BVEBO IC = 1mA, IC = 0 7 Collector Cutoff Current ICBO VCB = 500V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 7V, IC = 0 10 uA %DC Current Gain hFE VCE = 5V, IC = 0.3A 10 %Collector Emitter Saturation Voltage VCE(sat) IC = 2.5A, IB = 0.5A 1.5 V %Base Emitter Saturation Voltage VBE(sat) IC = 2.5A, IB = 0.5A 2.0 V Current Gain Bandwidth Product fT VCE = 5V, IC = 0.1A 10 MHz Output Capacitance COB VCB = 10V , f = 1MHz 40 pF Turn On Time tON IB1 = -IB2 = 0.5A 1 uS Storage Time tSTG IC = 2.5A 3 uS Fall Time tF VCC=150V 0.8 uS % Plus test : PW=300 I, Duty Cycle=2% Pulsed KSC5039F NPN SILICON TRANSISTOR KSC5039F NPN SILICON TRANSISTOR