. Electronic Components Datasheets 2sd717 free download

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2SD717 Silicon Epitaxial Planar Transistor GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCBO Collector-emitter voltage peak value VBE = 0V - 70 V VCEO Collector-emitter voltage (open base) - 70 V IC Collector current (DC) - 10 A ICM Collector current peak value - A Ptot Total power dissipation Tmb 25 - 80 W VCEsat Collector-emitter saturation voltage IC = 4.0A; IB=0.4A - 2 V VF Diode forward voltage IF = 3.5A 1.5 2.0 V tf Fall time IC=4A,IB1=-IB2=0.4A,VCC=30V 0.4 1.0- s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 70 V VCEO Collector-emitter voltage (open base) - 70 V VEBO Emitter-base oltage (open colloctor) 5 V IC Collector current (DC) - 10 A IB Base current (DC) - 2.5 A Ptot Total power dissipation Tmb 25 - 80 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP MAX UNIT ICBO Collector-base cut-off current VCB=70V - 0.2 mA IEBO Emitter-base cut-off current VEB=5V - 0.2 mA V(BR)CEO Collector-emitter breakdown voltage IC=1mA 70 V VCEsat Collector-emitter saturation voltages IC = 4.0A; IB = 0.4A - 3 V hFE DC cu