. Electronic Components Datasheets std3nb50 free download

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STD3NB50 N - CHANNEL 500V - 2.5 - 3A - IPAK/DPAK PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STD3NB50 500 V < 2.8 3A s TYPICAL RDS(on) = 2.5 s EXTREMELY HIGH dv/dt CAPABILITY 3 s 100% AVALANCHE TESTED 2 3 1 s VERY LOW INTRINSIC CAPACITANCES 1 s GATE CHARGE MINIMIZED IPAK DPAK DESCRIPTION TO-251 TO-252 Using the latest high voltage MESH OVERLAYTM (Suffix "-1") (Suffix "T4") process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 500 V V DGR Drain- gate Voltage (R GS = 20 k) 500 V V GS Gate-source Voltage