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File name: | bf998wr.pdf [preview bf998wr] |
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bf998wr.pdf | | DISCRETE SEMICONDUCTORS
DATA SHEET
BF998WR
N-channel dual-gate MOS-FET
Product specification 1997 Sep 05
Supersedes data of 1995 Apr 25
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
FEATURES PINNING
High forward transfer admittance PIN SYMBOL DESCRIPTION
Short channel transistor with high forward transfer 1 s, b source
admittance to input capacitance ratio
2 d drain
Low noise gain controlled amplifier up to 1 GHz.
3 g2 |
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