GSME mmbt5551 free download

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Guilin Strong Micro-Electronics Co.,Ltd. GM5551 MAXIMUM RATINGS RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCEO 160 Vdc - Collector Base Voltage VCBO 180 Vdc - Emitter Base Voltage VEBO 5.0 Vdc - Collector Current--Continuous Ic 600 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation 225 mW FR-5 Board(1) PD TA=25 25 1.8 mW/ Derate above25 25 Thermal Resistance Junction to Ambient RJA 556 /W Total Device Dissipation 300 mW Alumina Substrate ,(2)TA=25 PD Derate above25 25 2.4 mW/ Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg 150, -55to+150 DEVICE MARKING GM5551=G1 Guilin Strong Micro-Electronics Co.,Ltd. GM5551 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) Characteristic Symbol Min Max Unit Collector Emitter Breakdown Voltage(3) V(BR)CEO 160 -- Vdc -(Ic=1.0mAdc,IB=0) Collector Base Breakdown Voltage V(BR)CBO 180 -- Vdc -(Ic=100Adc,IE=0) Emitter-Base Breakdown Voltage V(BR)EBO 5.0 -- Vdc -(IE=10Adc,Ic=0) Emitter Cutoff Current (VEB=4.0Vdc,Ic=0) IEBO -- 50 nAdc Collector Cutoff Current ICBO -- 50 nAdc (VCB=120Vdc,IE=0) DC Current Gain HFE -- (Ic=1.0mAdc,VCE=5.0Vdc) 80 -- (Ic=10mAdc,VCE=5.0Vdc) 80 250 (Ic=50mAdc,VCE=5.0Vdc) 30 -- Collector-Emitter Saturation Voltage - (Ic=10mAdc, IB=1.0mAdc) VCE(sat) 0.15 Vdc