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Descr: . Electronic Components Datasheets Active components Transistors GSME bc856.pdf
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Guilin Strong Micro-Electronics Co.,Ltd. GM856,857,858( BC856,857,858) MAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM858A,B,C Unit (BC856A,B) (BC857A,B,C) (BC858A,B,C) Collector-Emitter Voltage VCEO -65 -45 -30 Vdc Collector-Base Voltage VCBO -80 -50 -30 Vdc Emitter-Base Voltage VEBO -5.0 -5.0 -5.0 Vdc Collector Current Continuous Ic -100 -100 -100 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 225 mW FR-5 Board(1) TA=25 25 1.8 mW/ Derate above25 25 Total Device Dissipation PD 300 mW Alumina Substrate ,(2)TA=25 Derate above25 25 2.4 mW/ Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg -55to+150 DEVICE MARKING GM856A(BC856A)=3A;GM856B(BC856B)=3B; GM856A(BC856A)=3A;GM856B(BC856B) (BC856A)=3A;GM856B (BC856B)=3B; GM857A(BC857A)=3E;GM857B(BC857B)=3F;GM857C(BC857C)=3G GM857A(BC857A)=3E;GM857B(BC857B)=3F;GM857C(BC857C)=3G (BC857A)=3E;GM857B (BC857B)=3F;GM857 C(BC857C)=3 GM858A(BC858A)=3J; GM858B(BC858B)=3K;GM858C(BC858C)=3L GM858A(BC858A) (BC858A)=3J; GM858B(BC858B)=3K;GM858C(BC858C) (BC858B)=3K;GM858C (BC858C)=3L Guilin Strong Micro-Electronics Co.,Ltd. GM856,857,858( BC856,857,858) ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) =25 ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage 856A,B -65 857A,B,C -45 (Ic=-10mAdc,IB=0) 858A,B,C -30 -- Vdc V(BR)CBO Collector-Base Breakdown Voltage 856A,B -80 857A,B,C -50 (Ic=-10Adc,I

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