GSME mmbt3906 free download

File name mmbt3906.pdf

Guilin Strong Micro-Electronics Co.,Ltd. GM3906 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -40 Vdc - Collector-Base Voltage VCBO -40 Vdc - Emitter-Base Voltage VEBO -6.0 Vdc - Collector Current-Continuous Ic -200 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation 225 mW FR-5 Board(1) PD TA=25 25 1.8 mW/ Derate above25 25 Total Device Dissipation 300 mW Alumina Substrate, (2) PD TA=25 25 2.4 mW/ Derate above25 25 Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg 150, -55to+150 DEVICE MARKING GM3906 GM3906=2A HFE(1)GM3906(100~200), GM3906(100~300) (1)GM3906(100~200 GM3906(100~30 ~200), ~300) Guilin Strong Micro-Electronics Co.,Ltd. GM3906 ELECTRICAL CHARACTERISTICS (TA=25 25 unless otherwise noted 25) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) V(BR)CEO -40 -- Vdc -(Ic=-1.0mAdc,IB=0) Collector-Base Breakdown Voltage V(BR)CBO -40 -- Vdc -(Ic=-10Adc,IE=0) Emitter-Base Breakdown Voltage V(BR)EBO -6.0 -- Vdc -(IE=-10Adc,Ic=0) Base Cutoff Current IBEX -- -50 nAdc (VCE=-30Vdc, VEB =-3.0 Vdc) Collector Cutoff Current ICEX -- -50 nAdc (VCE=-30Vdc, VEB =-3.0Vdc) ON CHARCTERISTICS(2) CHARCTERISTICS(2) Characteristic Symbol Min Max Unit DC Current Gain hPE -- (Ic=-0.1mAdc,VCE=-1.0Vdc) 40 -- (Ic=-1.0mAdc,VCE=-1.0Vdc) 70 -- (Ic=-10mAdc,VCE=-1.0Vdc) 100 300 (Ic=-50mAdc,VCE=-1.0Vdc) 60 -- (Ic=-100mAdc,VCE=-1.0Vd