WingShing 9013 free download

File name 9013.pdf

9013 NPN SILICON TRANSISTOR TO 92 FEATURES 1.EMITTER Power dissipation 2.BASE PCM : 0.625 W Tamb=25 3.COLLECTOR Collector current ICM : 0.5 A 1 2 3 Collector-base voltage -- V(BR)CBO : 45 V ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage - - V(BR)CBO Ic= 100 A IE=0 45 V Collector-emitter breakdown voltage - - V(BR)CEO Ic= 0. 1 mA IB=0 25 V Emitter-base breakdown voltage - - V(BR)EBO IE= 100 A IC=0 5 V Collector cut-off current -- ICBO VCB= 40 V IE=0 0.1 A Collector cut-off current -- ICEO VCE= 20 V IB=0 0.1 A Emitter cut-off current -- IEBO VEB= 5 V IC=0 0.1 A HFE 1 VCE= 1 V, IC= 50 mA 64 300 DC current gain(note) HFE 2 VCE= 1V, IC =500 mA 40 Collector-emitter saturation voltage - -