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STP80NF10 STP80NF10FP N-CHANNEL 100V - 0.012 - 80A TO-220/TO-220FP LOW GATE CHARGE STripFETTMII POWER MOSFET TYPE VDSS RDS(on) ID STP80NF10 100 V < 0.015 80 A STP80NF10FP 100 V < 0.015 38 A s TYPICAL RDS(on) = 0.012 s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED 3 3 2 2 CHARACTERIZATION 1 1 TO-220 TO-220FP DESCRIPTION This Power MOSFET series realized with STMicro- electronics unique STripFET process has specifical- ly been designed to minimize input capacitance and INTERNAL SCHEMATIC DIAGRAM gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP80NF10 STP80NF10FP VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 k) 100 V VGS Gate- source Voltage