Philips bf998 r free download

File name bf998_r.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d admittance to input capacitance ratio 4 3 Low noise gain controlled amplifier up to 1 GHz. g 2 g1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional 1 2 communications equipment. s,b Top view MAM039 DESCRIPTION Marking code: MOp. Depletion type field effect transistor in a plastic Fig.1 Simplified outline (SOT143B) microminiature SOT143B or SOT143R package with and symbol; BF998. source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. handbook, halfpage d CAUTION 3 4 The device is supplied in an antistatic package. The g2 gate-source input must be protected against static g1 discharge during transport or handling. PINNING 2 1 PIN SYMBOL DESCRIPTION s,b