GSME 2sk3018 free download

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Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 SOT-23 (SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N MOS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 35 V - Gate- Source Voltage VGS +20 V - Drain Current (continuous) IDR 100 mA - Drain Current (pulsed) IDRM 400 mA - THERMAL CHARACTERISTICS Symbol Max Unit Characteristic Total Device Dissipation PD 200 mW TA=25 25 Derate above25 25 1.8 mW/ Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg 150,-55to+150 Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 DEVICE MARKING 2SK3018=KN 2SK3018= ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS 35 -- -- V -(ID =10uA ,VGS=0V) Gate Threshold Voltage VGS(th) 0.8 -- 2 V (ID =100uA ,VGS= VDS) Drain-Source On Voltage -(ID=50mA ,VGS=5V) VDS(ON) -- -- 0.375 V (ID =400mA ,VGS=10V) 3.75 Diode Forward Voltage Drop VSD -- -- 1.5 V (ISD=200mA ,VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= BVDSS) IDSS -- -- 1 uA (VGS=0V, VDS=0.8BVDSS, TA=125) 500 Gate Body Leakage IGSS -- -- +100 nA (VGS=+20V, VDS=0V) Static Drain-Source On-State Resistance (ID=50mA ,VGS=4.5V) RDS(ON) -- -- 8 (ID=400mA ,VGS=10V) 7.5 Input Capacitance CISS -- -- 50 pF (VGS=0V, VDS=25V,f=1MHz) Common Source Output Capacitance (VGS=0V, VDS=25V,f=1MHz) COSS -- -- 25 pF Turn-ON Time t(on) -- -- 20 ns (VDS=30V, ID=200mA, RGEN=25) Turn-OFF Time t(off) -- -- 40 ns (VDS=30V,