Microsemi 2n696 2n697 free download

File name 2n696_2n697.pdf

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Total Power Dissipation @ TA = 250C (1) 0.6 W PT @ TC = 250C (2) 2.0 W 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction-to-Case RJC 0.075 C/mW TO-5* 1) Derate linearly 4.0 mW/0C for TA > 250C 2) Derate linearly 13.3 mW/0C for TC > 250C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CER Vdc RBE = 10 , IC = 100 mAdc 40 Collector-Base Cutoff Current VCB = 100 Vdc ICBO 10