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Descr: . Electronic Components Datasheets Active components Transistors HT Semiconductor kta1664.pdf
Group:Electronics > Components > Transistors
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KTA1664 TRANSISTOR (PNP) SOT-89-3L FEATURES Complementary to KTC4376 1. BASE Small Flat Package 2. COLLECTOR High Current Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA VCE=-1V, IC=-100mA 100 320 DC current gain hFE VCE=-1V, IC=-700mA 35 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-20mA -0.7 V Base-emitter voltage VBE VCE=-1V, IC=-10mA -0.5 -0.8 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 19 pF Transition frequency fT VCE=-5V,IC= -10mA 120 MHz CL

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