HT Semiconductor kta1663 free download

File name kta1663.pdf

KTA1663 TRANSISTOR (PNP) SOT-89 FEATURES High current applications 1. BASE Complementary to KTC4375 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A DC current gain hFE VCE=-2V, IC=-0.5A 100 320 Collector-emitter saturation voltage VCE(sat) IC=-1.5A, IB=-30mA -2 V Base-emitter voltage VBE VCE=-2V, IC=-0.5A -1 V Transition frequency fT VCE=-2V, IC=-500mA 120 MHz Collector output capacitance Cob VCB=-10V, IE=0,f=1MHz 50 MHz CLASSIFICATION OF hFE Rank O Y Range 100-200 160-320 1 JinYu