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Descr: . Electronic Components Datasheets Active components Transistors HT Semiconductor fmmt491.pdf
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FMMT491 TRANSISTOR (NPN) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 250 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO1 IC=10mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 A Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A hFE(1) VCE=5V,IC=1mA 100 1 hFE(2) VCE=5V,IC=500mA 100 300 DC current gain 1 hFE(3) VCE=5V,IC=1A 80 hFE(4) 1 VCE=5V,IC=2A 30 1 VCE(sat)1 IC=500mA,IB=50mA 0.25 V Collector-emitter saturation

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