HT Semiconductor bc857bv free download

File name bc857bv.pdf

BC857BV DUAL TRANSISTOR (PNP) FEATURES SOT-563 Epitaxial Die Construction Complementary NPN Types Available (BC847BV) Ultra-Small Surface Mount Package Marking: K5V MAXIMUM RATINGS (TA=25 unless otherwise noted ) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.15 W RJA Thermal Resistance. Junction to Ambient Air 833 /W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-1A,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA DC current gain hFE VCE=-5V,IC=-2mA 220 475 VCE(sat)(1) IC=-10mA,IB=-0.5mA -0.1 V Collector-emitter saturation voltage VCE(sat)(2) IC=-100mA,IB=-5mA -0.4 V VBE(sat)(1) IC=-10mA,IB=-0.5mA -0.7 V Base-emitter saturation voltage VBE(sat)(2) IC=-100mA,IB=-5mA -0.9 V VBE(1) VCE=-5V,IC=-2mA -0.6 -0.75 V Base-emitter voltage VBE(2) VCE=-5V,IC=-10mA -0.82 V Transition frequency fT VCE=-5V,IC=-10mA,f=100MHz 100 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz