WingShing 2sd862 free download

File name 2sd862.pdf

2SD862 Silicon Epitaxial Planar Transistor GENERAL DESCRIPTION Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA TO-126 SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 20 V VCEO Collector-emitter voltage (open base) - 20 V IC Collector current (DC) - 2 A ICM Collector current peak value - A Ptot Total power dissipation Tmb 25 - 10 W VCEsat Collector-emitter saturation voltage IC = 1.5A; IB = 0.15A - 0.5 V VF Diode forward voltage IF = 1.5A 1.5 2.0 V tf Fall time - s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 20 V VCEO Collector-emitter voltage (open base) - 20 V VEBO Emitter-base oltage (open colloctor) 6 V IC Collector current (DC) - 2 A IB Base current (DC) - 0.5 A Ptot Total power dissipation Tmb 25 - 10 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP MAX UNIT ICBO Collector-base cut-off current VCB=20V - 0.1 mA IEBO Emitter-base cut-off current VEB=5V - 0.2 mA V(BR)CEO Collector-emitter breakdown voltage IC=1mA 20 V VCEsat Collector-emitter saturation voltages IC