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Now downloading free:Philips phb2n50 1

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File name:phb2n50_1.pdf
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Descr: . Electronic Components Datasheets Active components Transistors Philips phb2n50_1.pdf
Group:Electronics > Components > Transistors >
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phb2n50_1.pdfPhilips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 500 V mounting featuring high avalanche ID Drain current (DC) 2 A energy capability, stable off-state Ptot Total power dissipation 50 W characteristics, fast switching and RDS(ON) Drain-source on-state resistance

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