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| File name: | phb2n50_1.pdf [preview phb2n50 1] |
| Size: | 59 kB |
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| MD5: | 390301314cce8f62aec884624f1db2e3 |
| Mfg: | Philips |
| Model: | phb2n50 1 🔎 |
| Original: | phb2n50 1 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors Philips phb2n50_1.pdf |
| Group: | Electronics > Components > Transistors > |
| Uploaded: | 26-06-2020 |
| User: | Anonymous |
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| Extracted files: | 1 | |
| File name | Text | |
| phb2n50_1.pdf | Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 500 V mounting featuring high avalanche ID Drain current (DC) 2 A energy capability, stable off-state Ptot Total power dissipation 50 W characteristics, fast switching and RDS(ON) Drain-source on-state resistance | |
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