|NDS8425 Datasheet (PDF) - Fairchild Semiconductor.pdf||July 1996
Single N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 7.4 A, 20 V. RDS(ON) = 0.025 @ VGS= 4.5 V.
transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.03 @ VGS= 2.7V.
density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON).
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly High power and current handling capability in a widely used
surface mount package.
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low i|