HT Semiconductor bc817 free download

File name bc817.pdf

BC871 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES For general AF applications 1. BASE High collector current 2. EMITTER High current gain 3. COLLECTOR Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10A, IE=0 50 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 45 V Emitter-base breakdown voltage VEBO IE= 1A, IC=0 5 V Collector cut-off current ICBO VCB= 45 V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 A hFE(1) VCE= 1V, IC= 100mA 100 600 DC current gain hFE(2) VCE= 1V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Base-emitter voltage VBE VCE= 1