HT Semiconductor bcx69 free download

File name bcx69.pdf

BCX69 TRANSISTOR (PNP) FEATURES SOT-89 For general AF applications High collector current 1. BASE High current gain Low collector-emitter saturation voltage 2. COLLECTOR 1 Complementary type: BCX68 (NPN) 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Dissipation 0.8 W TJ Junction Temperature 150 Tstg Storage Temperature -65-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A , IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA , IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-1A, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A DC current gain BCX69 85 375 BCX69-10 1) 85 160 hFE (1) VCE=-1V, IC=-500mA BCX69-16 100 250 BCX69-25 160 375