LGE ss8550 to-92 free download

File name ss8550_to-92.pdf

SS8550(PNP) TO-92 Bipolar Transistors 1. TO-92 EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC : 1 W (TA=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Emitter cut-off current ICEO VCE=-20V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA hFE(1) VCE=-1V, IC=-100mA 85 400 DC current gain hFE(2) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE(on) VCE=-1V, IC=-10mA -1 V Out capacitance Cob VCB=-10V, IE=0mA,f=1MHZ 20 pF Transition frequency