GSME m28s free download

File name m28s.pdf

Guilin Strong Micro-Electronics Co.,Ltd. GMM28S FEATURES High hFE NPN silicon NPN MAXIMUM RATINGS (Ta=25) (T CHARACTERISTIC Symbol Rating Unit Collector-Base Voltage VCBO 40 V - Collector-Emitter Voltage VCEO 20 V - Emitter-Base Voltage VEBO 5 V - Collector Current-Pulse Ic 1000 mA - Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55150 DEVICE MARKING M28S=28S. M28S=28S. 300~600 500~700 600~1200 Guilin Strong Micro-Electronics Co.,Ltd. GMM28S ELECTRICAL CHARACTERISTICS TA=25 T =25 unless otherwise noted 25 noted Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector Cutoff Current ICBO VCB=25V,IE=0 -- -- 100 nA Emitter Cutoff Current IEBO VEB=5V,I C=0 -- -- 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=100A 40 -- -- V - Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 20 -- -- V - Emitter-Base Breakdown Voltage V(BR)EBO IE=100A 5 -- -- V - DC Current Gain VCE=1V, hFE 300 -- 1200 -- IC=100mA Transition Frequency fT VCE=5V,IC=10mA -- 120 -- MHz Collector-Emitter Saturation Voltage IC=600mA, VCE(sat) -- -- 0.55 V - IB=20mA Guilin Strong Micro-Electronics Co.,Ltd. GMM28S DIMENSION