Microsemi 2n3996-99 free download

File name 2n3996-99.pdf

TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices Qualified Level JAN 2N3996 2N3997 2N3998 2N3999 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 8.0 Vdc Base Current IB 0.5 Adc 5.0 Collector Current IC Adc 10(1) 0 (2) Total Power Dissipation @ TA = +25 C 2.0 PT W @ TC = +1000C (3) 30 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C THERMAL CHARACTERISTICS TO-111* Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction-to-Case RJC 3.33 C/W 1) This value applies for tp 1.0 ms, duty cycle 50% 2) Derate linearly 11.4 mW/0C for TA > +250C 3) Derate linearly 300 mW/0C for TC > +1000C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 80 Vdc IC = 50 mAdc Collector-Emitter Breakdown Voltage V(BR)CBO 100