LGE 2sa1585s to-92s free download

File name 2sa1585s_to-92s.pdf

2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 123 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -2 A PC Collector Power Dissipation 400 mW Tj Junction Temperature 150 Tstg Storage Temperature Range -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -50A , IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=- 50A, IC=0 -6 V Collector cut-off current ICBO VCB=-20V , IE=0 -0.1 A Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 A DC current gain hFE VCE=-2V, IC= -0.1A 120 560 Collector-emitter saturation voltage VCEsat IC= -2A, IB=-0.1A -0.5 V VCE=-2V, IC=-0.5A Transition frequency fT F=100MHz 200 MHz CLASSIFICATION OF hFE Q Rank R s Range 120-170 180-390 270-560 2SA1585S TO-92S Transistor (PNP) Typical Characteristics