Supertex 2n7007 free download

File name 2n7007.pdf

2N7007 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / RDS(ON) ID(ON) Order Number / Package BVDGS (max) (min) TO-92 240V 45 150mA 2N7007 Features Advanced DMOS Technology s Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate s Low power drive requirement manufacturing process. This combination produces devices with s Ease of paralleling the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- s Low CISS and fast switching speeds ent in MOS devices. Characteristic of all MOS structures, these s Excellent thermal stability devices are free from thermal runaway and thermally-induced s Integral Source-Drain diode secondary breakdown. s High input impedance and high gain Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown s Complementary N- and P-channel devices voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications s Motor controls s Converters Package Options s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS SGD Drain-to-Gate Voltage BVDGS TO-92 Gate-to-Source Voltage