GSME 2sc3356 free download

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Guilin Strong Micro-Electronics Co.,Ltd. GM3356 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current-Continuous Ic 100 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 225 mW FR-5 Board(1) TA=25 25 1.8 mW/ Derate above25 25 Total Device Dissipation PD 300 mW Alumina Substrate ,(2)TA=25 Derate above25 25 2.4 mW/ Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg -55to+150 DEVICE MARKING GM3356(2SC3356)= 3356(2SC3356) GM3356(2SC3356)=R25 HFE:50-100; 80-150; 120-220; 200-300 0-100 80-150; 120-220; 200- 100; Guilin Strong Micro-Electronics Co.,Ltd. GM3356 ELECTRICAL CHARACTERISTICS =25 unless otherwise noted 25) (TA=25 ) Characteristic Symbol Min Typ Max Unit Emitter Cutoff Current IEBO -- -- 1.0 A (VEB=1.0v,IC=0) Collector Cutoff Current (VCB=10v,IE=0) ICBO -- -- 1.0 A Collector-Base Breakdown Voltage V(BR)CBO 20 -- -- V (Ic=10uA) Collector-Emitter Breakdown Voltage V(BR)CEO 12 -- -- V (Ic=1mA) Emitter-Base Breakdown Voltage V(BR)EBO 3 -- -- V (IE=10uA) DC Current Gain HFE 50 -- 300 (VCE=10v,IC=20mA) Gain Bandwidth Product fT -- 7000 -- MHz (VCE=10v,IC=20mA) Noise Figure NF -- -- 2.0 dB (V CE=1