GSME 2sa812 free download

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Guilin Strong Micro-Electronics Co.,Ltd. GM812 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - Collector-Base Voltage VCBO -60 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - Collector Current--Continuous Ic -100 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 225 mW FR-5 Board(1) TA=25 25 1.8 mW/ Derate above25 25 Total Device Dissipation 300 mW PD Alumina Substrate ,(2)TA=25 Derate above25 25 2.4 mW/ Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg -55to+150 DEVICE MARKING GM812=M4-M7 HFE:90-180=M4 135-270=M5 200-400=M6 300-600=M7 Guilin Strong Micro-Electronics Co.,Ltd. GM812 ELECTRICAL CHARACTERISTICS =25 unless otherwise noted 25) (TA=25 ) Characteristic Symbol Min Type Max Unit OFF CHARACTERISTICS Emitter Cutoff Current IEBO -- -- -0.1 A (VEB=-5.0v,IC=0) Collector Cutoff Current ICBO -- -- -0.1 A (VCB=-60v,IE=0) Collector Saturation Voltage VCE(sat) -- -0.18 -0.3 Vdc (Ic=-100mAdc,IB=-10mA) Base to Emitter Voltage VBE -0.58 -0.62 -0.68 Vdc -(VCE=-6.0v,IC=-1.0mA) DC Current Gain HFE 90 200 600 (VCE=-6.0v,IC=-1.0mA) Gain Bandwidth Product fT -- -180 -- MHz (VCE=-6.0v,IC=-1.0mA) Output Capacitance Cob -- 4.5 -- pF (VCB=-10v,IE=0,f=1.0MHz) 1. FR-5=1.0