Microsemi 2n6676 2n6678 2n6691 2n6693 free download

File name 2n6676_2n6678_2n6691_2n6693.pdf

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage VCEO 300 400 Vdc Collector-Base Voltage VCBO 450 650 Vdc Collector-Base Voltage VCEX 450 650 Vdc Emitter-Base Voltage VEBO 8.0 Vdc Base Current IB 5.0 Adc 2N6676, 2N6678 Collector Current IC 15 Adc TO-3 (TO-204AA)* 2N6676 2N6691 2N6678 2N6693 Total Power Dissipation @ TA = 250C 6.0(2) 3.0(3) W PT @ TC = 250C(1) 175 175 W 0 Operating & Storage Junction Temperature Range Top; Tstg -65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction-to-Case RJC 1.0 C/W 1) Derate linearly 1.0 W/0C for TC > 250C 2N6691, 2N6693 2) Derate linearly 34.2 mW/0C for TA > 250C TO-61* 3) Derate linearly 17.1 mW/0C for TA > 250C * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Break