Microsemi 2n6674 2n6675 2n6689 2n6690 free download

File name 2n6674_2n6675_2n6689_2n6690.pdf

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage VCEO 300 400 Vdc Collector-Base Voltage VCBO 450 650 Vdc Collector-Base Voltage VCEX 450 650 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Base Current IB 5.0 Adc 2N6674, 2N6675 Collector Current IC 15 Adc TO-3 (TO-204AA)* 2N6674 2N6689 2N6675 2N6690 Total Power Dissipation @ TA = +250C 6.0(2) 3.0(3) W PT @ TC = +250C(1) 175 175 W 0 Operating & Storage Temperature Range Top; Tstg -65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction-to-Case RJC 1.0 C/W 1) Derate linearly 1.0 W/0C for TC > 250C 2N6689, 2N6690 2) Derate linearly 34.2 mW/0C for TA > 250C TO-61* 3) Derate linearly 17.1 mW/0C for TA > 250C * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Break