Microsemi 2n5660 2n5661 2n5662 2n5663 free download

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices Qualified Level JAN, JANTX 2N5660 2N5661 2N5662 2N5663 JANTXV MAXIMUM RATINGS Ratings Symbol 2N5660 2N5661 Unit 2N5662 2N5663 Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 250 400 Vdc Collector-Emitter Voltage VCER 250 400 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 0.5 Adc TO-66* Collector Current IC 2.0 Adc (TO-213AA) 2N5660 2N5662 2N5660, 2N5661 2N5661 2N5663 Total Power Dissipation @ TA = +250C 2.0(1) 1.0(2) W PT @ TC = +1000C 20 (3) 15(4) W 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C THERMAL CHARACTERISTICS 2N5660 2N5662 Characteristics Symbol 2N5661 2N5663 Unit Thermal Resistance, Junction-to-Case RJC 0 TO-5* 5.0 6.67 C/W Junction-to-Ambient RJA 2N5662, 2N5663 87.5 145.8 1) Derate linearly 11.4 mW/0C for TA >+ 250C 2) Derate linearly 5.7 mW/0C for TA > +250C 3) Derate linearly 200 mW/0C for TC > +1000C 4) Derate linearl