International Rectifier irhf57234se free download

File name irhf57234se.pdf

PD - 93831 RADIATION HARDENED IRHF57234SE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-39) R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHF57234SE 100K Rads (Si) 0.42 5.4A TO-39 International Rectifier's R5TM technology provides high performance power MOSFETs for space appli- Features: cations. These devices have been characterized for n Single Event Effect (SEE) Hardened Single Event Effects (SEE) with useful performance n Ultra Low RDS(on) up to an LET of 80 (MeV/(mg/cm2)). The combination n Neutron Tolerant of low RDS(on) and low gate charge reduces the power n Identical Pre- and Post-Electrical Test Conditions losses in switching applications such as DC to DC n Repetitive Avalanche Ratings converters and motor control. These devices retain n Dynamic dv/dt Ratings all of the well established advantages of MOSFETs n Simple Drive Requirements such as voltage control, fast switching, ease of paral- n Ease of Paralleling leling and temperature stability of electrical param- n Hermetically Sealed eters. Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25