| File information: | |
| File name: | AO4850 - Dual N-Channel Enhancement Mode Field Effect Transistor.pdf [preview AO4850 - Dual N-Channel Enhancement Mode Field Effect Transistor] |
| Size: | 117 kB |
| Extension: | |
| Mfg: | Various |
| Model: | AO4850 - Dual N-Channel Enhancement Mode Field Effect Transistor 🔎 |
| Original: | AO4850 - Dual N-Channel Enhancement Mode Field Effect Transistor 🔎 |
| Descr: | . Electronic Components Datasheets Various AO4850 - Dual N-Channel Enhancement Mode Field Effect Transistor.pdf |
| Group: | Electronics > Other |
| Uploaded: | 19-10-2021 |
| User: | Anonymous |
| Multipart: | No multipart |
| Information about the files in archive: | ||
| Decompress result: | OK | |
| Extracted files: | 1 | |
File name AO4850 - Dual N-Channel Enhancement Mode Field Effect Transistor.pdf AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide VDS (V) = 75V excellent RDS(ON) and low gate charge. The two MOSFETs ID = 3.1A (VGS = 10V) may be used in H-bridge, Inverters and other applications. RDS(ON) < 130m (VGS = 10V) AO4850 is Pb-free (meets ROHS & Sony 259 RDS(ON) < 165m (VGS = 4.5V) specifications). D1 D2 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 G2 S1 S2 SOIC-8 Absolute Maximum Ratings TA=25 | ||

| Date | User | Rating | Comment |