Fairchild Semiconductor nds9953a free download

File name nds9953a.pdf

February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density High density cell design for extremely low RDS(ON). process is especially tailored to minimize on-state resistance, High power and current handling capability in a widely used provide superior switching performance, and withstand high surface mount package. energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage Dual MOSFET in surface mount package. applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A= 25