Fairchild Semiconductor ndt454p free download

File name ndt454p.pdf

June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect -5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.07 @ VGS = -6V density, DMOS technology. This very high density process is RDS(ON) = 0.09 @ VGS = -4.5V. especially tailored to minimize on-state resistance and provide High density cell design for extremely low RDS(ON). superior switching performance. These devices are particularly High power and current handling capability in a widely used suited for low voltage applications such as notebook computer surface mount package. power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ____________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings T A = 25