Keithley SemiChar Eguide 1213 free download

File name SemiChar_Eguide_1213.pdf

CHANNEL EFFECTIVE MOBILITY TECHNIQUE | MONITORING OXIDE BREAKDOWN | PCM DEVICES | BTI TESTING | VERY LOW FREQUENCY C-V | LAB-BASED AUTOMATION A G R E AT E R M E A S U R E O F C O N F I D E N C E Learn how to solve today's semiconductor device characterization challenges. Channel Effective Mobility Technique. ... 2 Bring wafer level automation to your lab measurements. ... 12 Monitor oxide breakdown with confidence. ... 4 Turnkey systems for lab automation, wafer level reliability, and more. ... 13 Characterize highly advanced phase change memory devices. ... 6 High speed, high integrity switching. ... 14 Model and monitor Bias Temperature Instability (BTI) for CMOS transistors. ... 8 Switching and multi-channel measurement. ... 15 Characterize devices with very low frequency C-V measurements. ... 10 Contact Us. ... 16 INSIDE: Instant online access to application notes, webinars, demos, and more CHANNEL EFFECTIVE MOBILITY TECHNIQUE | MONITORING OXIDE BREAKDOWN | PCM DEVICES | BTI TESTING | VERY LOW FREQUENCY C-V | LAB-BASED AUTOMATION previous home next Accurate Channel Effective Mobility Analysis Using the Ultra-Fast Single Pulse (UFSP) Technique The channel effective mobility (eff) influences the MOSFET performance through the carrier velocity and the driving current. It is one of the key parameters for complementary metal-oxide- semiconductor (CMOS) technologies. It is widely used for benchmarking differences in technology development and material selection. It is also a fundamental parameter for device modeling. With device scaling down to nano-size regime and the introduction of new dielectric materials, the conventional measurement technique for mobility does not address these issues, leading to significant measurement errors. As a result, an ultra-fast single pulse technique (UFSP) has been developed to overcome these shortcomings. Learn more. Want to learn more? Illustration of the working principle of UFSP Tec