Keithley 2518 Charge Trapping free download

File name 2518 Charge Trapping.pdf

A G R E AT E R M E A S U R E O F C O N F I D E N C E C-V, I-V, and charge-pumping. From these measurements, important device parameters can be extracted and plotted as a function of time to show the degradation caused by the stresses. Stress and C-V Measurements [5]. In this measurement, the device under test (DUT) usually is a MOS capacitor. A C-V sweep is Qualifying High performed on the DUT before and after volt- age stress. The C-V sweep can be a full sweep from inversion to accumulation, so that a flat Gate Materials with band voltage can be calculated by quantum mechanical modeling. However, a faster and easier way is to do the voltage sweep in a Charge-Trapping relatively small voltage range around an esti- mated flat band. The flat band voltage is then extracted from the C-V data. Either a single Measurements sweep or bi-directional sweep can be used; a bi-directional sweep will show any hyster- esis effects. Flat band voltage as a function