| File | Date | Descr | Size | Popular | Mfg | Model |
| 2562 Meas are Low in High R : Full Text Matches - Check >> |
| 2562 Meas are Low in High R : Forum Matches - Check >> |
| Found in: original (1) |
| 2562 Meas are Low in High R.pdf | 13/02/20 | Keithley Appnotes 2562 Meas are Low in High R.pdf | 51 kB | 2 | Keithley | 2562 Meas are Low in High R |
| Found in: fulltext index (98) |
| 2559 Error in Low Meas.pdf | 07/03/20 | Keithley Appnotes 2559 Error in Low Meas.pdf | 54 kB | 0 | Keithley | 2559 Error in Low Meas |
| k2645.pdf | 04/10/09 | - High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated | 312 kB | 468 | FUSI | 2SK2645-01MR |
| 2460 Low Resistance High Current APpNote.pdf | 20/01/20 | Keithley 2460 2460 Low Resistance High Current APpNote.pdf | 636 kB | 3 | Keithley | 2460 Low Resistance High Current APpNote |
| RGLNA03(2-12 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard.
The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input | 114 kB | 92 | Rficsolutions.Inc | RGLNA03 |
| RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier .The
device is designed for 802.11a and WLAN MIMO
system.
The noise figure is 1.4 dB at 5.25 GHz. The
RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
| 2SK3296.pdf | 24/02/05 | MOS FIELD EFFECT TRANSISTOR
DESCRIPTION:
The 2SK3296 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchr | 422 kB | 1381 | NEC | 2SK3296 |
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| 5990-4716EN DSO90008 Series Low-Profile High-Performance Oscilloscopes Digitizers - Data Sheet c2014 | 01/12/21 | Agilent 5990-4716EN DSO90008 Series Low-Profile High-Performance Oscilloscopes Digitizers - Data Sheet c20141022 [20].pdf | 830 kB | 1 | Agilent | 5990-4716EN DSO90008 Series Low-Profile High-Performance Oscilloscopes Digitizers - Data Sheet c2014 |
| RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11b/g and WLAN MIMO
system.
The noise figure is 1.5 dB at 2.4 GHz and die area
is | 77 kB | 64 | Rficsolutions.Inc | RGLNA08 |
| RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13/02/08 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11a/b/g and Wi-Fi
systems. It gives Power Output of 5 dBm at P1 dB.
The minimum no | 59 kB | 65 | Rficsolutions.Inc | RGLNA02 |
| RS01_1.7_2.7GHz_ single stage LNA_.pdf | 12/02/08 | The RS01 is 1.7 to 2.7 GHz; high efficiency Single
stage Low Noise Amplifier designed on 0.18μm
SiGe BiCMOS technology. The device is designed
for 802.11b/g standard and WLAN MIMO system.
The simulated noise figure is as low as 1.2 dB at 2.0
GHz | 184 kB | 78 | Rficsolutions Inc. | RS01 |
| RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf | 13/02/08 | The RGLNA06 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The MMIC Low Noise Amplifier doesn’t require any
off-chip component. The Broadband LNA is
designed for the 802.11a/b/g/n system.
The LNA covers a wide range o | 54 kB | 78 | Rficsolutions.Inc | RGLNA06 |
| STK4152%20II.pdf | 15/01/05 | IT\'S HIGH OUTPUT & LOW NOISE | 460 kB | 1822 | SANYO | STK4152II |
| GEDA01.pdf | 11/02/08 | The GEDA01 is 7.0 GHz to 20.0 GHz low power
single stage buffer amplifier. The amplifier is
designed using 2 μm InGaP HBT Technology for
high frequency applications.
Driver amplifier shows gain of 4.5 dB at 20 GHz with
power output of 9 dBm. It | 48 kB | 518 | Rficsolutions Inc. | The GEDA01 is 7.0 GHz to 20.0 GHz low power |
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| GEDA02.pdf | 11/02/08 | The GEDA02 is 20 GHz to 40 GHz low power buffer
amplifier. The amplifier is designed using 2 μm
InGaP HBT process for high frequency applications.
Driver amplifier shows gain of 1dB at 40 GHz with
power output of 0dBm. It operates at 4.2Volts. | 44 kB | 278 | Rficsolutions Inc. | The GEDA02 is 20 GHz to 40 GHz low power buffer |
| 4050.pdf | 22/04/05 | 74HC4050
Hex high-to-low level shifter | 38 kB | 2142 | Philips | 4050 |
| 4049.pdf | 22/04/05 | 74HC4049
Hex inverting high-to-low level
shifter | 39 kB | 479 | Philips | 4049 |
| 4104.pdf | 20/05/05 | HEF4104B
MSI
Quadruple low to high voltage
translator with 3-state outputs | 68 kB | 230 | Philips | 4104 |
| MT-3EQ CLR Published.pdf | 09/01/20 | MT-3EQ Volume Low Mid High Stereo Tone Control Pre Amplifier | 25 kB | 38 | Motronix | MT-3EQ |
| 40109.pdf | 06/04/05 | CMOS Quad Low-to-High Voltage Level Shifter | 78 kB | 402 | Intersil | 40109 |