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Search results for: 2563 Noise in Low Curr (found: 95 regularSearch) ask for a document

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2563 Noise in Low Curr.pdf05-11-2019 Keithley Appnotes 2563 Noise in Low Curr.pdfOther51 kB0Keithley2563 Noise in Low Curr2563 Noise in Low CurrAnonymous
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RTLNA01.pdf12-02-2008The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP Block .The device is designed for 802.11 b/g and Cellular system. The LNA has input and output matching off-chip which will provide the flexibility to tune the LNA for low noise figure. The LNA is biaComponents61 kB104Rficsolutions Inc.RTLNA01The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IPjai_kale
RGDIV01.pdf11-02-2008RGDIV01 is a low noise divide by 8 static divider utilizing InGaP HBT technology. The device operates from 7 to 20 GHz.Components162 kB48Rficsolutions Inc.RGDIV01RGDIV01 is a low noise dividejai_kale
RJL01_1.5_1.7GHz_GPS_LNA_.pdf12-02-2008The RJL01 is 1.5 to 1.7 GHz, Low Noise Amplifier IP Block. The LNA is designed on the 0.18um SiGe BiCMOS Process. The device is designed for GPS system. The LNA has provision for mode control to turn off. It requires a single +3.0 Volt supply and conComponents169 kB195Rficsolutions Inc.RJL01The RJL01 is 1.5 to 1.7 GHz, Low Noise Amplifierjai_kale
RJM01_1.6_3GHz_Gillbert cell Mixer_.pdf12-02-2008The RJM01 is 1.6 to 3.0 GHz; Low noise, Gilbert Cell down conversion SiGe Mixer designed on 0.35 μm SiGe BiCMOS technology. The device is designed for 802.11 b/g standard and WLAN MIMO system. Functional Diagram . The noise figure is 4.43 dB anComponents173 kB155Rficsolutions Inc.RJM01The RJM01 is 1.6 to 3.0 GHz; Low noise, Gilbertjai_kale
RGLNA03(2-12 GHz GaAs pHEMT).pdf13-02-2008The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard. The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No inputComponents114 kB92Rficsolutions.IncRGLNA03The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifierjai_kale
5991-3886EN Low Noise Filter Improves B2961A 62A Power Source Noise Performance - Application Brief 12-09-2019 Agilent 5991-3886EN Low Noise Filter Improves B2961A 62A Power Source Noise Performance - Application Brief c20140618 [2].pdfOther541 kB3Agilent5991-3886EN Low Noise Filter Improves B2961A 62A Power Source Noise Performance - Application Brief 5991-3886EN Low Noise Filter Improves B2961A 62A Power Source Noise Performance - Application Brief Anonymous
RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf13-02-2008The RGLNA10 is 7.0-26.0 GHz; Low Noise Distributed Amplifiers using GaAs pHEMT Technology. The self-biased amplifier provides 19 dB of gain and 14 dBm of output power at P1 dB gain compression while requiring only 86 mA from a single 3.0 V supply. GComponents44 kB198Rficsolutions.IncRGLNA10The RGLNA10 is 7.0-26.0 GHz; Low Noisejai_kale
RS01_1.7_2.7GHz_ single stage LNA_.pdf12-02-2008The RS01 is 1.7 to 2.7 GHz; high efficiency Single stage Low Noise Amplifier designed on 0.18μm SiGe BiCMOS technology. The device is designed for 802.11b/g standard and WLAN MIMO system. The simulated noise figure is as low as 1.2 dB at 2.0 GHzComponents184 kB77Rficsolutions Inc.RS01The RS01 is 1.7 to 2.7 GHz; high efficiency Singlejai_kale
RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf13-02-2008The RGLNA06 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The MMIC Low Noise Amplifier doesn’t require any off-chip component. The Broadband LNA is designed for the 802.11a/b/g/n system. The LNA covers a wide range oComponents54 kB77Rficsolutions.IncRGLNA06The RGLNA06 is a broadband high efficiency GaAsjai_kale
RJL02 _GPS LNA_.pdf12-02-2008The RJL02 is 1575 MHz narrow band Low Noise Amplifier IP Block. The LNA is designed on the 0.18um SiGe BiCMOS Process. The device is designed for GPS system Application. The LNA die area is 0.8 mm x 0.7 mm. It has two off chip components at input sidComponents164 kB151Rficsolutions Inc.RJL02The RJL02 is 1575 MHz narrow band Low Noisejai_kale
Device Evaluation using the Keysight B2961A B2962A Ultra Low Noise DC Source-flyer 5991-1420EN c201224-11-2019 Agilent Device Evaluation using the Keysight B2961A B2962A Ultra Low Noise DC Source-flyer 5991-1420EN c20121218 [2].pdfOther340 kB0AgilentDevice Evaluation using the Keysight B2961A B2962A Ultra Low Noise DC Source-flyer 5991-1420EN c2012Device Evaluation using the Keysight B2961A B2962A Ultra Low Noise DC Source-flyer 5991-1420EN c2012Anonymous
B2961A B2962A 6.5 Digit Low Noise Power Source-brochure 5991-1388EN c20140829 [12].pdf19-10-2019 Agilent B2961A B2962A 6.5 Digit Low Noise Power Source-brochure 5991-1388EN c20140829 [12].pdfOther1455 kB0AgilentB2961A B2962A 6.5 Digit Low Noise Power Source-brochure 5991-1388EN c20140829 [12]B2961A B2962A 6.5 Digit Low Noise Power Source-brochure 5991-1388EN c20140829 [12]Anonymous
STK4152%20II.pdf15-01-2005IT\'S HIGH OUTPUT & LOW NOISEIntegrated circuits460 kB1811SANYOSTK4152IIMELTOKHY2005
RFISFR01(2.5 -2.686 GHz).pdf13-02-2008The RFISFR01 is a RF front-end module that integrates band switching and is a transceiver front end designed for low voltage operation. The module contains wide band power amplifier, low noise amplifiers, band pass, low pass filters.Components56 kB187Rficsolutions.IncRFISFR01The RFISFR01 is a RF front-end module thatjai_kale
RGLNA03.pdf13-12-2007broadband Low noise amplifier 2 GHz to 12 GHzIntegrated circuits114 kB94deepak242003
TDA1175.pdf25-12-2005LOW-NOISE VERTICAL DEFLECTION SYSTEMIntegrated circuits165 kB587tda1175BZKuki
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf13-02-2008The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 iComponents36 kB61Rficsolutions.IncRGLNA09The RGLNA09 is 5.15 to 5.35 GHz high efficiencyjai_kale
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf13-02-2008The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area isComponents77 kB64Rficsolutions.IncRGLNA08The RGLNA08 is 2.4 to 2.5 GHz high efficiencyjai_kale
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13-02-2008The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum noComponents59 kB65Rficsolutions.IncRGLNA02The RGLNA02 is 2.0 to 6.0 GHz high efficiencyjai_kale

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