Philips blf573 blf573s free download

File name blf573_blf573s.pdf

BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 -- 8 July 2010 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average output power = 300 W Power gain = 27.2 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF and VHF band) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applications NXP Semiconductors BLF573; BLF573S HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF573 (SOT502A) 1 drain 1 1 2 gate 3 3 source [1] 2 2