Microsemi 2n3810 2n3811 free download

File name 2n3810_2n3811.pdf

TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices Qualified Level 2N3810 2N3811 JAN 2N3810L 2N3811L JANTX 2N3810U 2N3811U JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 50 mAdc One Both Section 1 Sections2 Total Power Dissipation @ TA = +250C PT 0.5 0.6 W TO-78* 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 3.43 mW/0C for TA > +250C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10