HT Semiconductor pxt8550 free download

File name pxt8550.pdf

PXT8 550 TRANSISTOR(PNP) SOT-89 FEATURES Compliment to PXT8050 1. BASE 1 MARKING: Y2 2. COLLECTOR 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A hFE(1) VCE= -1V, IC= -100mA 85 400 DC current gain hFE(2) VCE= -1V, IC= -800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -1.2 V Base-emitter on voltage VBE(on) Ic=-1V,VCE=-10mA