HT Semiconductor 2sb709a free download

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2SB7 09A TRANSISTOR(PNP) SOT-23 FEATURES For general amplification 1. BASE Complementary to 2SD601A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -10 A, IE=0 -45 V Collector-emitter breakdown voltage V(BR)CEO IC= -2mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE= -10 A, IC=0 -7 V Collector cut-off current ICBO VCB= -20 V, IE=0 -0.1 A Collector cut-off current ICEO VCE= -10V, IB=0 -100 A DC current gain hFE VCE= -10V,IC= -2mA 160 460 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.5 V VCE= -10V, IC= -1mA Transition frequency fT 60 MHz f=200MHz VCB= -10V, IE= 0 Collector output capacitance Cob 2.7 pF f=1MHz CLASSIFICATION OF HFE Rank Q R S Range 160-260 210-340 290-460 Marking