Various NDS8425 Datasheet (PDF) - Fairchild Semiconductor free download

File name NDS8425 Datasheet (PDF) - Fairchild Semiconductor.pdf

July 1996 NDS8425 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 7.4 A, 20 V. RDS(ON) = 0.025 @ VGS= 4.5 V. transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.03 @ VGS= 2.7V. density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly High power and current handling capability in a widely used surface mount package. suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ___________________________________________________________________________________________ 5 4 6 3 7 2 8 1 ABSOLUTE MAXIMUM RATINGS T A = 25