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Descr: . Electronic Components Datasheets Active components Transistors Microsemi 2n2609.pdf
Group:Electronics > Components > Transistors
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TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted) Parameters / Test Conditions Symbol Value Units Gate-Source Voltage VGSS 30 V Power Dissipation (1) TA = +250C PD 300 mW 0 Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 C (1) Derate linearly 1.71 mW/0C for TA > +250C. TO-18 (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) PARAMETERS / TEST CONDITIONS Symbol Min. Max. Units Gate-Source Breakdown Voltage VDS = 0, IG = 1.0

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