Philips pbss305px free download

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PBSS305PX 80 V, 4.0 A PNP low VCEsat (BISS) transistor Rev. 02 -- 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NX. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -80 V IC collector current - - -4 A ICM peak collector current single pulse; - - -8 A tp 1 ms RCEsat collector-emitter saturation IC = -4 A; [1] - 58 83 m resistance IB = -200 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS305PX 80 V, 4.0 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 emitter 2 2 collector 3 base 3 3 2 1 1 006aaa231 3. Ordering information