HT Semiconductor ktc4075 free download

File name ktc4075.pdf

KTC4075 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER Excellent hFE linearity 3. COLLECTOR High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 100 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A DC current gain hFE VCE= 6V, IC=2mA 70 700 Collector-emitter saturation voltage VCEsat IC=1