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STQ1NC60R N-CHANNEL 600V - 12 - 0.3A TO-92 PowerMESHTMII Power MOSFET TYPE VDSS RDS(on) ID STQ1NC60R 600 V < 15 0.3 A s TYPICAL RDS(on) = 12 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED TO-92 TO-92 BULK (AMMOPACK) DESCRIPTION Using the latest high voltage MESH OVERLAYTMII process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and INTERNAL SCHEMATIC DIAGRAM unrivalled gate charge and switching characteris- tics. APPLICATIONS s LOW SWITCH MODE POWER SUPPLIES (SMPS) s BATTERY CHARGER ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STQ1NC60R Q1NC60R TO-92 BULK STQ1NC60R-AP Q1NC60R TO-92 AMMOPACK July 2003 1/9 STQ1NC60R ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage