Philips bf1212 r wr free download

File name bf1212_r_wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; N-channel dual-gate MOS-FETs BF1212WR FEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1 source Low noise gain controlled amplifier 2 drain Excellent low frequency noise performance 3 gate 2 Partly internal self-biasing circuit to ensure good 4 gate 1 cross-modulation performance during AGC and good DC stabilization. APPLICATIONS 4 handbook, 2 columns 3 Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. 1 2 DESCRIPTION Top view MSB014 Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input BF1212; marking code: LGp voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and Fig.1 Simplified outline (SOT143B). SOT343R plastic packages respectively. 3 handbook, 2 columns 4 handbook, halfpage 3 4 2 1 2 1 Top view MSB035 Top view MSB842 BF1212R; marking code: LKp BF1212WR; marking code: ML Fig.2 Simplified outline (SOT143R).